The world leader in advance memory technology, Samsung Electronics has started the mass production of 14 nanometer Dynamic Random Access Memory (DRAM) that is based on the extreme ultra violet technology. It is the industry smallest 14 nm DRAM it is said by Samsung.
The ultra violet technology reduces the repetitive steps in multi patterning and it improves the patterning accuracy and it resulting in better performance and greater yields, as well as the shortened development time.
The company says that it is expected that the latest process to increase the productivity rate by twenty percent and to reduce the power consumption by nearly twenty percent. The DDR5 is aimed at the demands of the compute hungry the high band width workloads in super computing, artificial intelligence and the machine learning, as well as the data analytics applications.
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The senior vice president of the Samsung electronics says that: they have Led the DRAM market for nearly three decades by pioneering key patterning technology innovations. Samsung is setting today the another milestone with the multi layer EUV that has enabled extreme miniaturization at 14 nm.
The feat is not possible with the conventional argon fluoride process. They said that they will continue to provide the most differentiated memory solutions by fully addressing the need for greater performance and capacity in data driven world of 5G.
The 14 nm DRAM promises to double the performance at up to 7,200 megabits per second it is good enough to speed the process two 30 GB ultra high definition movies in one second.
The company says that they are planning to expand the 14 nm DDR 5 portfolio to support the data center and the super computer & enterprise server applications. The company expected that 14 nm DRAM grow to chip density to 24 GB in better meeting the rapidly growing data demands.
